Transient four-wave mixing in T-shaped GaAs quantum wires

W. Langbein, H. Gislason, J. M. Hvam

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17 Citations (Scopus)


The binding energy of excitons and biexcitons and the exciton dephasing in T-shaped GaAs quantum wires is investigated by transient four-wave mixing. The T-shaped structure is fabricated by cleaved-edge overgrowth, and its geometry is engineered to optimize the one-dimensional confinement. In this wire of
6.6 × 24 nm2 size, we find a one-dimensional confinement of more than 20 meV, an inhomogeneous broadening of 3.4 meV, an exciton binding energy of 12 meV, and a biexciton binding energy of 2.0 meV. A dispersion of the homogeneous linewidth within the inhomogeneous broadening due to phonon-assisted relaxation is observed. The exciton acoustic-phonon-scattering coefficient of
6.1 ± 0.5 μeV/K is larger than in comparable quantum-well structures.
Original languageEnglish
Pages (from-to)16667-16674
Number of pages8
JournalPhys. Rev. B
Issue number24
Publication statusPublished - 1 Dec 1999


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