MBE growth and characterization of high purity GaAs/AIGaAs on the (110) surface of GaAs

C. B. Sørensen, H. Gislason, D. Birkedal, J. M. Hvam

Research output: Contribution to journalArticlepeer-review

Abstract

An improved quality of (110) GaAs has been grown by molecular beam epitaxy using As2 in lieu of As4. The most pronounced effect of using As2 is a higher doping efficiency of Si $-doped GaAs layers, resulting in a mobility of the (110) layers, comparable to the reference (100) samples. The high quality of the (110) GaAs was confirmed by low temperature photoluminescence. The spectrum of the GaAs layer shows a single dominant free exciton line with a linewidth of 1.0 meV. © 1995.
Original languageUndefined/Unknown
Pages (from-to)767-773
Number of pages7
JournalMicroelectronics Journal
Volume26
Issue number8
DOIs
Publication statusPublished - 1995

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