MBE growth and characterization of high purity GaAs/AIGaAs on the (110) surface of GaAs

C. B. Sørensen, H. Gislason, D. Birkedal, J. M. Hvam

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An improved quality of (110) GaAs has been grown by molecular beam epitaxy using As2 in lieu of As4. The most pronounced effect of using As2 is a higher doping efficiency of Si $-doped GaAs layers, resulting in a mobility of the (110) layers, comparable to the reference (100) samples. The high quality of the (110) GaAs was confirmed by low temperature photoluminescence. The spectrum of the GaAs layer shows a single dominant free exciton line with a linewidth of 1.0 meV. © 1995.
Original languageUndefined/Unknown
Pages (from-to)767-773
Number of pages7
JournalMicroelectronics Journal
Issue number8
Publication statusPublished - 1995

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