MBE Cleaved Edge Overgrowth of Quantum Wires

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Abstract

Cleaved edge overgrowth (CEO) is a molecular beam epitaxy (MBE) process which can produce laterally confined semiconductor nanostructures1. The basic idea of the CEO is to utilize the atomic layer precision of the MBE process to control the dimensions of a low-dimensional structure (dimensions < 10 nm!). First a multiple quantum well (MQW) structure is made by standard MBE growth on a (100) GaAs substrate. The (100) GaAs samples are then thinned to textasciitilde100--200 textmum thickness and cleaved in ultra high vacuum in the MBE machine. The cleave exposes an exact (110) surface of GaAs and the final step is a MBE overgrowth on the cleaved edge. High quality MBE growth on (110) GaAs is not trivial. We have made growth tests on (110) GaAs substrates which indicates that an improved quality (110) GaAs/AlGaAs is achieved using molecular beams of As2 instead of As4 in the MBE growth. We are currently interested in the concept of T-shaped quantum wires2--5. Photoluminescence characterization at 4 K of our first CEO sample with T-shaped intersections between 70 Å thick (100) MQW's and a 70 Å (110) single quantum well (SQW) indicates formation of quantum wires textasciitilde14 meV below the (100) MQW luminescence and textasciitilde7 meV below the (110) SQW luminescence.
Original languageEnglish
Title of host publicationSpectroscopy and Dynamics of Collective Excitations in Solids
EditorsBaldassare Di Bartolo, Stamatios Kyrkos
Place of PublicationBoston, MA
PublisherSpringer US
Pages609-609
Number of pages1
ISBN (Print)978-1-4615-5835-4
DOIs
Publication statusPublished - 1997

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