Abstract
We report on the design and growth of asymmetric T-shaped quantum wires with large
one-dimensional confinement energies. Prior to growth, the optimal structure for a given ~110! well
width is determined by a calculation. The structures are made by molecular beam epitaxy cleaved
edge overgrowth. We demonstrate a confinement of 54 meV in an experimental structure consisting
of a narrow ~110! oriented GaAs/Al0.3Ga0.7As quantum well overgrown on much wider
~001! oriented Al0.14Ga0.86As/Al0.3Ga0.7As wells.
one-dimensional confinement energies. Prior to growth, the optimal structure for a given ~110! well
width is determined by a calculation. The structures are made by molecular beam epitaxy cleaved
edge overgrowth. We demonstrate a confinement of 54 meV in an experimental structure consisting
of a narrow ~110! oriented GaAs/Al0.3Ga0.7As quantum well overgrown on much wider
~001! oriented Al0.14Ga0.86As/Al0.3Ga0.7As wells.
| Original language | English |
|---|---|
| Pages (from-to) | 3248-3250 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 69 |
| Issue number | 21 |
| DOIs | |
| Publication status | Published - 1996 |